stn1hnc60.pdf part of ST stn1hnc60 stn1hnc60.pdf, . Electronic Components Datasheets Active components Transistors ST stn1hnc60.pdf text manual preview

Text preview for : stn1hnc60.pdf part of ST stn1hnc60 . Electronic Components Datasheets Active components Transistors ST stn1hnc60.pdf

Back to : stn1hnc60.pdf | Home

STN1HNC60
N-CHANNEL 600V - 7 - 0.4A - SOT-223
PowerMeshTMII MOSFET

TYPE VDSS RDS(on) ID

STN1HNC60 600 V <8 0.4 A
s TYPICAL RDS(on) = 7 2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
s NEW HIGH VOLTAGE BENCHMARK 2
s GATE CHARGE MINIMIZED 1
DESCRIPTION SOT-223
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage