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STN1HNC60 N-CHANNEL 600V - 7 - 0.4A - SOT-223 PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STN1HNC60 600 V <8 0.4 A s TYPICAL RDS(on) = 7 2 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 s NEW HIGH VOLTAGE BENCHMARK 2 s GATE CHARGE MINIMIZED 1 DESCRIPTION SOT-223 The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage