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SGSIF461
FAST-SWITCH HOLLOW-EMITTER
NPN TRANSISTOR
s VERY HIGH SWITCHING SPEED
s NPN TRANSISTOR
s LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The SGSIF461 is manufactured using 3
2
Multiepitaxial Mesa technology for cost-effective
1
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The SGSF series is designed for high speed ISOWATT218
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 850 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
VEBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 15 A
I CM Collector Peak Current (t p < 5 ms) 25 A
IB Base Current 8 A
I BM Base Peak Current (t p < 5 ms) 15 A
o
P tot Total Dissipation at T c = 25 C 55 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
SGSIF461
THERMAL DATA
ISOWATT218
o
R thj-case Thermal Resistance Junction-Case Max 2.2 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 700 V 200