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SGSIF461 FAST-SWITCH HOLLOW-EMITTER NPN TRANSISTOR s VERY HIGH SWITCHING SPEED s NPN TRANSISTOR s LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES DESCRIPTION The SGSIF461 is manufactured using 3 2 Multiepitaxial Mesa technology for cost-effective 1 high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed ISOWATT218 switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 850 V V CEO Collector-Emitter Voltage (I B = 0) 400 V VEBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 15 A I CM Collector Peak Current (t p < 5 ms) 25 A IB Base Current 8 A I BM Base Peak Current (t p < 5 ms) 15 A o P tot Total Dissipation at T c = 25 C 55 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/4 SGSIF461 THERMAL DATA ISOWATT218 o R thj-case Thermal Resistance Junction-Case Max 2.2 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off V CE = 700 V 200