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2N5551
NPN Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol 2N5551 Unit
Collector-Emitter Voltage VCEO 160 Vdc
Collector-Base Voltage VCBO 180 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current IC 600 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 160 - Vdc
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 180 - Vdc
-
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) V(BR)EBO 6.0 Vdc
Collector Cutoff Current (VCB=120 Vdc, IE=0) ICBO - 0.05 uAdc
Emitter Cutoff Current (VEB= 4.0 Vdc, I C =0) IEBO - 0.05 uAdc
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2N5551
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC=1.0 mAdc, VCE=5.0 Vdc) hFE (1) 80 - - -
DC Current Gain
hFE (2) 80 - 250 -
(IC=10 mAdc, VCE= 5.0 Vdc)
(I C =50 mAdc, VC E =5.0 V dc ) hFE (3) 50 - - -
Collector-Emitter Saturation Voltage -
VCE(sat) - 0.5 Vdc
(IC= 50 mAdc, IB= 5.0 mAdc)
Base-Emitter Saturation Voltage -
VBE(sat) - 1.0 Vdc
(IC= 50 mAdc, IB= 5.0 mAdc)
Current-Gain-Bandwidth Product 100
(IC= 10 mAdc, VCE=5.0 Vdc, f=30MHz) fT - - MHz
Classification of hFE(1)
Range 150-200
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2N5551
500
300 VCE = 1.0 V
TJ = 125 C
200 VCE = 5.0 V
hFE , DC CURRENT GAIN
25 C
100
- 55 C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
F IG 1. DC C urrent G ain
VCE , COLLECTOR- EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
F IG 2. C ollec tor S aturation R egion
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2N5551
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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