Wietron 2n5551 free download

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2N5551 NPN Transistors TO-92 1. EMITTER 1 2. BASE 2 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage VCEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 160 - Vdc Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 180 - Vdc - Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) V(BR)EBO 6.0 Vdc Collector Cutoff Current (VCB=120 Vdc, IE=0) ICBO - 0.05 uAdc Emitter Cutoff Current (VEB= 4.0 Vdc, I C =0) IEBO - 0.05 uAdc WEITRON http://www.weitron.com.tw 2N5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=1.0 mAdc, VCE=5.0 Vdc) hFE (1) 80 - - - DC Current Gain hFE (2) 80 - 250 - (IC=10 mAdc, VCE= 5.0 Vdc) (I C =50 mAdc, VC E =5.0 V dc ) hFE (3) 50 - - - Collector-Emitter Saturation Voltage - VCE(sat) - 0.5 Vdc (IC= 50 mAdc, IB= 5.0 mAdc) Base-Emitter Saturation Voltage - VBE(sa