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Guilin Strong Micro-Electronics Co.,Ltd.
MMBTH10
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO 25 Vdc
Collector-Base Voltage
VCBO 30 Vdc
Emitter-Base Voltage
VEBO 3.0 Vdc
Collector Current-Continuous
Ic 50 mAdc
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THERMAL CHARACTERISTICS
Characteristic Symbol Max
Unit
Total Device Dissipation PD
225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Thermal Resistance Junction to Ambient
RJA 556 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
MMBTH10=3EM
Guilin Strong Micro-Electronics Co.,Ltd.
MMBTH10
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
=25 )
Characteristic Symbol Min Typ Max Unit
Emitter Cutoff Current
IEBO -- -- 100 nA
(VEB=2.0v,IC=0)
Collector Cutoff Current
ICBO -- -- 100 nA
(VCB=25v,IE=0)
Collector-Base Breakdown Voltage
V(BR)CBO 30 -- -- V
(Ic=100uA)
Collector-Emitter Breakdown Voltage
V(BR)CEO 25 -- -- V
(Ic=1mA)
Emitter-Base Breakdown Voltage
V(BR)EBO 3 -- -- V
(IE=10uA)
Collector Saturation Voltage
VCE(sat) -- -- 0.5 Vdc
(Ic=4mAdc,IB=0.4mA)
DC Current Gain
HFE 60 -- --
(VCE=10v,IC=4mA)
Gain Bandwidth Product
fT 650 -- -- MHz
(VCE=10v,IC=4mA)
Output Capacitance
Cob -- -- 0.7 pF
(VCB=10v,IE=0,f=1.0MHz)
1. FR-5=1.0