GSME mmbth10 free download

File name mmbth10.pdf

Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current-Continuous Ic 50 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 556 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING MMBTH10=3EM Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) =25 ) Characteristic Symbol Min Typ Max Unit Emitter Cutoff Current IEBO -- -- 100 nA (VEB=2.0v,IC=0) Collector Cutoff Current ICBO -- -- 100 nA (VCB=25v,IE=0) Collector-Base Breakdown Voltage V(BR)CBO 30 -- -- V (Ic=100uA) Collector-Emitter Breakdown Voltage V(BR)CEO 25 -- -- V (Ic=1mA) Emitter-Base Breakdown Voltage V(BR)EBO 3 -- -- V (IE=10uA) Collector Saturation Voltage VCE(sat) -- -- 0.5 Vdc (Ic=4mAdc,IB=0.4mA) DC Current Gain HFE 60 -- -- (VCE=10v,IC=4mA) Gain Bandwidth Product fT 650 -- -- MHz (VCE=10v,IC=4mA) Output Capacitance Cob -- -- 0.7 pF (VCB=10v,IE=0,f=1.0MHz) 1. FR-5=1.0