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Guilin Strong Micro-Electronics Co.,Ltd. GM9018 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current-Continuous Ic 50 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation PD 300 mW Alumina Substrate ,(2)TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING GM9018=J8 HFE:40-72; 72-97; 97-146; 146-200 Guilin Strong Micro-Electronics Co.,Ltd. GM9018 ELECTRICAL CHARACTERISTICS =25 unless otherwise noted 25) (TA=25 ) Characteristic Symbol Min Typ Max Unit Emitter Cutoff Current IEBO -- -- 0.5 A (VEB=3.0v,IC=0) Collector Cutoff Current (VCB=20v,IE=0) ICBO -- -- 0.5 A Collector-Base Breakdown Voltage V(BR)CBO 30 -- -- V (Ic=100uA) Collector-Emitter Breakdown Voltage V(BR)CEO 20 -- -- V (Ic=1mA) Emitter-Base Breakdown Voltage V(BR)EBO 4 -- -- V (IE=100uA) Collector Saturation Voltage VCE(sat) -- -- 0.6 Vdc (Ic=10mAdc,IB=1mA) DC Current Gain HFE 40 -- 200 (VCE=5.0v,IC=1.0mA) Gain Bandwidth Product fT 600 800 1100 MHz (VCE=5.0v,IC=10mA) Noise Figure NF