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Descr: . Electronic Components Datasheets Active components Transistors GSME mmbta92.pdf
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Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 MAXIMUM RATINGS Characteristic Symbol Unit GMA92 GMA93 Collector-Emitter Voltage VCEO -300 -200 Vdc - Collector-Base Voltage VCBO -300 -200 Vdc - Emitter-Base Voltage VEBO -6.0 -6.0 Vdc Collector Current-Continuous Ic -500 -500 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation PD 300 mW Alumina Substrate ,(2) TA=25 25 2.4 mW/ Derate above25 25 Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg 150, -55to+150 DEVICE MARKING GMA92=2D;GMA93=2E Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 ELECTRICAL CHARACTERISTICS =25 unless otherwise noted 25) (TA=25 ) Characteristic Symbol Min Max Unit V(BR)CEO Collector-Emitter Breakdown Voltage(3) GMA92 -300 -- -(Ic=-1.0mAdc,IB=0) GMA93 -200 -- Vdc V(BR)CBO Collector-Base Breakdown Voltage GMA92 -300 -- -(Ic=-100Adc,IE=0) GMA93 -200 __ Vdc Emitter-Base Breakdown Voltage -(IE=-10Adc,Ic=0) V(BR)EBO -5.0 -- Vdc Emitter Cutoff Current (VEB=-3.0Vdc,Ic=0) IEBO __ -100 nAdc Collector Cutoff Current ICBO (VCB=-200Vdc,IE=0) GMA92 -- -250 (VCB=-160Vdc,IE=0) GMA93 __ -250 nAdc DC Current Gain HFE -- (Ic=-1.0mAdc,VCE=-10.0Vdc) 25 -- (Ic=-10mAdc,VCE=-10.0

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