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TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices Qualified Level
JAN
2N6989 JANTX
2N6990
2N6989U JANTXV
JANS
MAXIMUM RATINGS (1)
Ratings Symbol Value Units
Collector-Emitter Voltage (3) VCEO 50 Vdc
Collector-Base Voltage (3) VCBO 75 Vdc TO- 116*
Emitter-Base Voltage (3) VEBO 6.0 Vdc 2N6989
Collector Current (3) IC 800 mAdc
Total Power Dissipation @ TA = +250C
2N6989(2) PD 1.5 W
2N6989U(2) 1.0 20 PIN LEADLESS*
2N6990(2) 0.4
0 2N6989U
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 C
1) Maximum voltage between transistors shall be 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
14 PIN FLAT PACK*
Ratings apply to total package.
3) Ratings apply to each transistor in the array. 2N6990
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 50 Vdc
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc ICBO 10 Adc
VCB = 75 Vdc; Ic= 10