Microsemi 2n6989-2n6990 free download

File name 2n6989-2n6990.pdf

TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) VCEO 50 Vdc Collector-Base Voltage (3) VCBO 75 Vdc TO- 116* Emitter-Base Voltage (3) VEBO 6.0 Vdc 2N6989 Collector Current (3) IC 800 mAdc Total Power Dissipation @ TA = +250C 2N6989(2) PD 1.5 W 2N6989U(2) 1.0 20 PIN LEADLESS* 2N6990(2) 0.4 0 2N6989U Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 C 1) Maximum voltage between transistors shall be 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA = +250C for 2N6990 14 PIN FLAT PACK* Ratings apply to total package. 3) Ratings apply to each transistor in the array. 2N6990 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc ICBO 10 Adc VCB = 75 Vdc; Ic= 10