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MJE13007A
SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL
DESCRIPTION 3
The MJE13007A is silicon multiepitaxial mesa 2
1
NPN power transistor mounted in Jedec TO-220
plastic package.
They are inteded for use in motor control, TO-220
switching regulators etc.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage (V BE = -1.5V) 850 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 8 A
I CM Collector Peak Current 16 A
IB Base Current 4 A
I BM Base Peak Current 8 A
IE Emitter Current 12 A
I EM Emitter Peak Current 24 A
P tot Total Dissipation at T c 25 o C 80 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
MJE13007A
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.56 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEV Collector Cut-off V CE = rated V CEV 1 mA
o
Current (V BE = -1.5V) V CE = rated V CEV T c = 100 C 5 mA
I EBO Emitter Cut-off Current V EB = 9 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 10 mA 400 V
Sustaining Voltage
V CE(sat) Collector-Emitter IC = 2 A IB = 0.4 A 1 V
Saturation Voltage IC = 5 A IB = 1A 1.5 V
IC = 8 A IB = 2A 3 V
IC = 5 A IB = 1A T c = 100 o C 2 V
V BE(sat) Base-Emitter IC = 2 A I B = 0.4 A 1.2 V
Saturation Voltage IC = 5 A IB = 1 A 1.6 V
IC = 5 A IB = 1 A T c = 100 o C 1.5 V
h FE DC Current Gain IC = 2 A V CE = 5 V 8 40
IC = 5 A V CE = 5 V 6 30
fT Transition Frequency I C = 0.5 A V CE = 10 V f = 1 MHz 4 MHz
C CBO Output Capacitance IE = 0 V CB = 10 V f = 0.1 MHz 110 pF
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t on Turn-on Time V CC = 125 V I C = 5 A 0.7