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MJE13007A SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY APPLICATIONS s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control, TO-220 switching regulators etc. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 850 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 8 A I CM Collector Peak Current 16 A IB Base Current 4 A I BM Base Peak Current 8 A IE Emitter Current 12 A I EM Emitter Peak Current 24 A P tot Total Dissipation at T c 25 o C 80 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/4 MJE13007A THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.56 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEV Collector Cut-off V CE = rated V CEV 1 mA o Current (V BE = -1.5V) V CE = rated V CEV T c = 100