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STB16NS25
N-CHANNEL 250V - 0.23 - 16A D2PAK
MESH OVERLAYTM MOSFET
TYPE VDSS RDS(on) ID
STB16NS25 250 V < 0.28 16 A
s TYPICAL RDS(on) = 0.23
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad- D2PAK
t( s)
uc
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
d
tion structure, makes it suitable in coverters for
lighting applications.
P ro
INTERNAL SCHEMATIC DIAGRAM
le te
so
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
Ob
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
-
ct (s)
o du
ABSOLUTE MAXIMUM RATINGS
e Pr
let
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
o
bs
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage