ST stb16ns25 free download

File name stb16ns25.pdf

STB16NS25 N-CHANNEL 250V - 0.23 - 16A D2PAK MESH OVERLAYTM MOSFET TYPE VDSS RDS(on) ID STB16NS25 250 V < 0.28 16 A s TYPICAL RDS(on) = 0.23 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- D2PAK t( s) uc vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company's proprietary edge termina- d tion structure, makes it suitable in coverters for lighting applications. P ro INTERNAL SCHEMATIC DIAGRAM le te so APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING Ob s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT - ct (s) o du ABSOLUTE MAXIMUM RATINGS e Pr let Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V o bs VDGR Drain-gate Voltage (RGS = 20 k) 250 V VGS Gate- source Voltage