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MMSTA42
SOT-323 Transistor (NPN)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
Features
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMSTA92(PNP)
MARKING:K3M
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.3 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=200V,IE=0 0.25 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
hFE(1) VCE=10V,IC=1mA 60
DC current gain hFE(2) VCE=10V,IC=10mA 100 200
hFE(3) VCE=10V,IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V
Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz
MMSTA42
SOT-323 Transistor (NPN)
MMSTA42
SOT-323 Transistor (NPN)