LGE mmsta42 free download

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MMSTA42 SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=200V,IE=0 0.25 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A hFE(1) VCE=10V,IC=1mA 60 DC current gain hFE(2) VCE=10V,IC=10mA 100 200 hFE(3) VCE=10V,IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz MMSTA42 SOT-323 Transistor (NPN) MMSTA42 SOT-323 Transistor (NPN)