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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31
N-channel field-effect transistors
Product specification 1997 Dec 05
Supersedes data of April 1991
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
handbook, halfpage 3
field-effect transistor in a plastic SOT23 package.
d
g
APPLICATIONS s
Low level general purpose amplifiers in thick and 1 2
thin-film circuits.
Top view MAM385
PINNING - SOT23
Marking codes:
BFR30: M1p.
PIN SYMBOL DESCRIPTION BFR31: M2p.
1 d drain(1)
2 s source(1) Fig.1 Simplified outline and symbol.
3 g gate
Note
1. Drain and source are interchangeable. CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VGSO gate-source voltage open drain 25 V
Ptot total power dissipation Tamb 40 C 250 mW
IDSS drain current VGS = 0; VDS = 10 V
BFR30 4 10 mA
BFR31 1 5 mA
yfs common-source transfer admittance ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 2
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VDGO drain-gate voltage open source 25 V
VGSO gate-source voltage open drain 25 V
ID drain current 10 mA
IG forward gate current (DC) 5 mA
Ptot total power dissipation Tamb 40 C; note 1; see Fig.2 250 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 430 K/W
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0 40 80 120 160 200
Tamb (