| File information: | |
| File name: | bfr30-bfr31.pdf [preview bfr30-bfr31] |
| Size: | 271 kB |
| Extension: | |
| Mfg: | Philips |
| Model: | bfr30-bfr31 🔎 bfr30bfr31 |
| Original: | bfr30-bfr31 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Philips bfr30-bfr31.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 03-08-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name bfr30-bfr31.pdf DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification 1997 Dec 05 Supersedes data of April 1991 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel handbook, halfpage 3 field-effect transistor in a plastic SOT23 package. d g APPLICATIONS s Low level general purpose amplifiers in thick and 1 2 thin-film circuits. Top view MAM385 PINNING - SOT23 Marking codes: BFR30: M1p. PIN SYMBOL DESCRIPTION BFR31: M2p. 1 d drain(1) 2 s source(1) Fig.1 Simplified outline and symbol. 3 g gate Note 1. Drain and source are interchangeable. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 25 V VGSO gate-source voltage open drain 25 V Ptot total power dissipation Tamb 40 C 250 mW IDSS drain current VGS = 0; VDS = 10 V BFR30 4 10 mA BFR31 1 5 mA yfs common-source transfer admittance | ||

| Date | User | Rating | Comment |