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BDX53BFP
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
3
DESCRIPTION 2
1
The BDX53BFP is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration and are mounted in T0-220FP fully T0-220FP
molded isolated package. It is intented for use in
hammer drivers, audio amplifiers and other
medium power linear and switching applications.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K R 2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CBO Collector-Base Voltage (IE = 0) 80 V
V CEO Collector-Emitter Voltage (I B = 0) 80 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (repetitive) 12 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 o C 29 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
April 1998 1/4
BDX53BFP
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 4.3 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 80 V 0.2 mA
Current (IE = 0)
I CEO Collector Cut-off V CB = 40 V 0.5 mA
Current (IB = 0)
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 100 mA 80 V
Sustaining Voltage
(IB = 0)
V CE(sat ) Collector-emitter IC = 3 A I B =12 mA 2 V
Saturation Voltage
V BE(s at) Base-emitter IC = 3 A I B =12 mA 2.5 V
Saturation Voltage
hFE DC Current G ain IC = 3 A V CE = 3 V 750
V F Parallel-diode Forward IF = 3 A 1.8 2.5 V
Voltage IF = 8 A 2.5 V
Pulsed: Pulse duration = 300