ST bdx53--- free download

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BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY MOLDED ISOLATED PACKAGE s 2000 V DC ISOLATION (U.L. COMPLIANT) 3 DESCRIPTION 2 1 The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully T0-220FP molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 5 V IC Collector Current 8 A I CM Collector Peak Current (repetitive) 12 A IB Base Current 0.2 A P t ot Total Dissipation at T c 25 o C 29 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C April 1998 1/4 BDX53BFP THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 4.3 C/W o R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off V CB = 80 V