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BUX12
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
2
DESCRIPTION
The BUX12 is a silicon multiepitaxial planar NPN
transistor in Jedec TO-3 metal case, intended for TO-3
use in switching and linear applications in military
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 300 V
V CEX Collector-emitter Voltage (V BE = - 1.5V) 300 V
V CEO Collector-emitter Voltage (I B = 0) 250 V
V EBO Emitter-base Voltage (Ic = 0) 7 V
IC Collector Current 20 A
I CM Collector Peak Current (t P = 10 ms) 25 A
IB Base Current 4 A
P tot Total Power Dissipation at T case 25 Co
150 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max Operating Junction Temperature 200 C
February 1997 1/4
BUX12
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.17 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off V CE = 200 V 1.5 mA
Current (I B = 0)
I CEX Collector Cut-off V CE = 300 V V BE = -1.5V 1.5 mA
Current T case = 125 o C
V CE = 300 V V BE = -1.5V 6 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 200 mA 250 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 50 mA 7 V
(I C = 0)
V CE(sat) Collector-Emitter IC = 5 A I B = 0.5 A 0.22 1 V
Saturation Voltage I C = 10 A I B = 1.25 A 0.5 1.5 V
V BE(sat) Base-Emitter I C = 10 A I B = 1.25 A 1.23 1.5 V
Saturation Voltage
h FE DC Current Gain IC = 5 A V CE = 4 V 20 60
I C = 10 A V CE = 4 V 10
I S/b Second Breakdown V CE = 30 V t=1s 5 A
Collector Current V CE = 140 V t=1s 0.15 A
fT Transistor Frequency IC = 1 A V CE = 15 V 8 MHz
f = 10 MHz
t on Turn-on Time I C = 10 A I B1 = 1.25 A 0.28 1