ST bux12 free download

File name bux12.pdf

BUX12 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for TO-3 use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 300 V V CEX Collector-emitter Voltage (V BE = - 1.5V) 300 V V CEO Collector-emitter Voltage (I B = 0) 250 V V EBO Emitter-base Voltage (Ic = 0) 7 V IC Collector Current 20 A I CM Collector Peak Current (t P = 10 ms) 25 A IB Base Current 4 A P tot Total Power Dissipation at T case 25 Co 150 W o T stg Storage Temperature -65 to 200 C o Tj Max Operating Junction Temperature 200 C February 1997 1/4 BUX12 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Cut-off V CE = 200 V 1.5 mA Current (I B = 0) I CEX Collector Cut-off V CE = 300 V V BE = -1.5V 1.5 mA Current T case = 125 o C V CE = 300 V V BE = -1.5V 6 mA I EBO Emitter Cut-off Current V EB = 5 V 1 mA