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Deflection Output
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FJAF6812
FJAF6812
High Voltage Color Display Horizontal Deflection Output
· High Collector-Base Breakdown Voltage : BVCBO = 1500V · High Switching Speed : tF(typ.) =0.1µs · For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 ~ 150 Units V V V A A W °C °C
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30 IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
FJAF6812
Typical Characteristics
11
100
10
Ib=1.8A
Ib=1.6A
IC [A], COLLECTOR CURRENT
9 8 7 6 5 4 3 2 1 0 0 2 4 6 8
Ib=1.4A Ib=1.2A Ib=1.0A Ib=800mA Ib=600mA Ib=400mA Ib=200mA
125 C 75 C
o
o
VCE = 5V
hFE, DC CURRENT GAIN
Ta= - 25 C 25 C
10
o
o
10
12
14
1 0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
100
100
VCE(sat) [V], SATURATION VOLTAGE
IC = 5IB
IC = 3IB
VCE(sat) [V], SATURATION VOLTAGE
10
10
125 C
1
o
125 C
1
o
75 C 25 C
0.1
o
o
75 C
o
0.1
o
25 C Ta = - 25 C
o
Ta = - 25 C
o
0.01 0.1
1
10
0.01 0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
14
10
VCE = 5V
12
IC [A], COLLECTOR CURRENT
tSTG
tSTG [µs], STORAGE TIME
10
1
8
tF [µs], FALL TIME
6
125 C
o
tF
0.1
4
75 C
2
o
25 C
o
Ta = - 25 C
0 0.0 0.5 1.0 1.5
0.01 -0.1
o
RESISTIVE LOAD Vcc = 200V IC = 7A IB1 = 1.4A
-1 -10
VBE [V], BASE-EMITTER VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Switching Time
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
FJAF6812
Typical Characteristics (Continued)
100 30
IC (Pulsed)
TC = 25 C Single Pulse
10ms 1ms 300µs
o
IC [A], COLLECTOR CURRENT
10
IC (DC)
IC [A], COLLECTOR CURRENT
10
1
0.1
IB1 = 1.2A, IB2 = - 4A VBE (off) = - 3V L = 200µH Single Pulse
1
0.01 1 10 100 1000 5000
10
100
1000
5000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Forward Bias Safe Operating Area
Figure 8. Reverse Bias Safe Operating Area
80
70
PC [W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
TC [ C], CASE TEMPERATURE
Figure 9. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
FJAF6812
Package Demensions
TO-3PF
5.50 ±0.20
4.50 ±0.20
15.50 ±0.20
ř3.60 ±0.20
3.00 ±0.20 (1.50)
10.00 ±0.20
10
°
26.50 ±0.20
23.00 ±0.20
16.50 ±0.20
14.50 ±0.20
0.85 ±0.03
16.50 ±0.20
2.00 ±0.20
14.80 ±0.20
2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 0.10
+0.20
2.00 ±0.20
2.50 ±0.20
2.00 ±0.20
3.30 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.90 0.10
+0.20
3.30 ±0.20
2.00 ±0.20
5.50 ±0.20
1.50 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001
22.00 ±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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OPTOPLANARTM PACMANTM POPTM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER® SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET® VCXTM
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H2