Fairchild FJAF6812 free download

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FJAF6812 FJAF6812 High Voltage Color Display Horizontal Deflection Output · High Collector-Base Breakdown Voltage : BVCBO = 1500V · High Switching Speed : tF(typ.) =0.1µs · For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30 IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 Typical Characteristics 11 100 10 Ib=1.8A Ib=1.6A IC [A], COLLECTOR CURRENT 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 Ib=1.4A Ib=1.2A Ib=1.0A Ib=800mA Ib=600mA Ib=400mA Ib=200mA 125 C 75 C o o VCE = 5V hFE, DC CURRENT GAIN Ta= - 25 C 25 C 10 o o 10 12 14 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 100 100 VCE(sat) [V], SATURATION VOLTAGE IC = 5IB IC = 3IB VCE(sat) [V], SATURATION VOLTAGE 10 10 125 C 1 o 125 C 1 o 75 C 25 C 0.1 o o 75 C o 0.1 o 25 C Ta = - 25 C o Ta = - 25 C o 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 14 10 VCE = 5V 12 IC [A], COLLECTOR CURRENT tSTG tSTG [µs], STORAGE TIME 10 1 8 tF [µs], FALL TIME 6 125 C o tF 0.1 4 75 C 2 o 25 C o Ta = - 25 C 0 0.0 0.5 1.0 1.5 0.01 -0.1 o RESISTIVE LOAD Vcc = 200V IC = 7A IB1 = 1.4A -1 -10 VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Switching Time ©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001 FJAF6812 Typical Characteristics (Continued) 100 30 IC (Pulsed) TC = 25 C Single Pulse 10ms 1ms 300µs o IC [A], COLLECTOR CURRENT 10 IC (DC) IC [A], COLLECTOR CURRENT 10 1 0.1 IB1 = 1.2A, IB2 = - 4A VBE (off) = - 3V L = 200µH Single P