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2SD1616A(NPN)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
Power dissipation
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 120 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 750 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55 to150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10A , IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC= 2mA , IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
hFE1 VCE=2 V, IC= 100mA 135 600
DC current gain
hFE2 VCE=2 V, IC= 1A 81
Collector-emitter saturation voltage * VCE(sat) IC= 1A, IB=50mA 0.3 V
Base-emitter saturation voltage * VBE(sat) IC= 1A, IB=50mA 1.2 V
Base-emitter voltage * VBE VCE= 2V, IC=50mA 0.6 0.7 V
Transition frequency fT VCE=2 V, IC= 100mA 100 MHz
Output capacitance Cob VCB=10 V,IE= 0, f=1MHz 19 pF
Turn on time ton 0.07 s
Vcc=10V, IC=100mA,
Storage time tS 0.95 s
IB1=-IB2=10mA
Fall time tF 0.07 s
*pulse test: PW350