LGE 2sd1616a free download

File name 2sd1616a.pdf

2SD1616A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 750 mW Tj Junction Temperature 150 Tstg Storage Temperature -55 to150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10A , IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC= 2mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 A Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A hFE1 VCE=2 V, IC= 100mA 135 600 DC current gain hFE2 VCE=2 V, IC= 1A 81 Collector-emitter saturation voltage * VCE(sat) IC= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) IC= 1A, IB=50mA 1.2 V Base-emitter voltage * VBE VCE= 2V, IC=50mA 0.6 0.7 V Transition frequency fT VCE=2 V, IC= 100mA 100 MHz Output capacitance Cob VCB=10 V,IE= 0, f=1MHz 19 pF Turn on time ton 0.07 s Vcc=10V, IC=100mA, Storage time tS