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STP3NB100
STP3NB100FP
N-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FP
PowerMeshTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP3NB100 1000 V <6 3A
STP3NB100FP 1000 V <6 3A
s TYPICAL RDS(on) = 5.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES 3 3
2 2
s GATE CHARGE MINIMIZED 1 1
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3NB100 STP3NB100FP
VDS Drain-source Voltage (VGS = 0) 1000 V
VDGR Drain-gate Voltage (RGS = 20 k) 1000 V
VGS Gate- source Voltage