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STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3 - 3A TO-220/TO-220FP PowerMeshTM MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V <6 3A STP3NB100FP 1000 V <6 3A s TYPICAL RDS(on) = 5.3 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 3 2 2 s GATE CHARGE MINIMIZED 1 1 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NB100 STP3NB100FP VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain-gate Voltage (RGS = 20 k) 1000 V VGS Gate- source Voltage