Text preview for : buv50.pdf part of ST buv50 . Electronic Components Datasheets Active components Transistors ST buv50.pdf



Back to : buv50.pdf | Home

BUV50

HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s FULLY CHARACTERISED AT 125oC

APPLICATION
s SWITCHING REGULATORS
s MOTOR CONTROL 1
2
DESCRIPTION
The BUV50 is a Multiepitaxial planar NPN
transistor in TO-3 metal case. TO-3
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.


INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage (V BE = -1.5V) 250 V
V CEO Collector-Emitter Voltage (I B = 0) 125 V
V EBO Emitt er-Base Voltage (IC = 0) 7 V
IC Collector Current 25 A
I CM Collector Peak Current 50 A
IB Base Current 6 A
I BM Base Peak Current 12 A
Reverse Bias Base Power Dissipation
P Base 2 W
(B.E. junction in avalance)
P t ot Total Power Dissipation at T case 25 o C 150 W
o
T stg Storage T emperature -65 to 200 C
o
Tj Max Operating Junction T emperature 150 C



April 1997 1/5
BUV50

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1.17 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
Collector Cut-off V CE = V CEV 1 mA
I CER o
Current (R BE = 10) V CE = V CEV T c = 100 C 5 mA
Collector Cut-off V CE = V CEV V BE = - 1.5V 1 mA
I CEV o
Current V CE = V CEV V BE = - 1.5V T C=100 C 5 mA
Emitter Cut-off
I EBO V EB = 5 V 1 mA
Current (IC = 0)
Collector-Emitter I C = 0.2A
V CEO(sus ) 125 V
Sustaining Voltage L = 25 mH
Emitter-base
V EB0 I E = 50 mA 7 V
Voltage (Ic = 0)
IC = 10A IB = 0.5A 0.4 0.8 V
IC = 20A IB = 2A 0.6 0.9 V
Collector-Emitter
IC = 24A IB = 3A 0.7 1.2 V
V CE(sat ) Saturation Voltage
IC = 10A IB = 0.5A Tj = 100 o C 0.5 0.9 V
o
IC = 20A IB = 2A T j = 100 C 0.75 1.5 V
IC = 24A IB = 3A T j = 100 oC 0.9 1.8 V
IC = 20A IB = 2A 1.25 1.6 V
Base-Emitter IC = 24A IB = 3A 1.35 1.7 V
V BE(s at) o
Saturation Voltage IC = 20A IB = 2A T j = 100 C 1.25 1.7 V
o
IC = 24A IB = 3A T j = 100 C 1.45 1.9 V
Rate of Rise of V CC = 100V I B1 = 3A R C =0
dic /dt on-st ate Collect or T j = 25o C 50 100 A/