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File name buv50.pdf

BUV50 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s FULLY CHARACTERISED AT 125oC APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL 1 2 DESCRIPTION The BUV50 is a Multiepitaxial planar NPN transistor in TO-3 metal case. TO-3 It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 250 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitt er-Base Voltage (IC = 0) 7 V IC Collector Current 25 A I CM Collector Peak Current 50 A IB Base Current 6 A I BM Base Peak Current 12 A Reverse Bias Base Power Dissipation P Base 2 W (B.E. junction in avalance) P t ot Total Power Dissipation at T case 25 o C 150 W o T stg Storage T emperature -65 to 200 C o Tj Max Operating Junction T emperature 150 C April 1997 1/5 BUV50 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it Collector Cut-off V CE = V CEV 1 mA I CER o Current (R BE = 10) V CE = V CEV T c = 100 C