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BCP68
SOT-223 Transistor(NPN)
1. BASE
2. COLLECTOR SOT-223
1 3. EMITTER
Features
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP69 (PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 32 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 1 W
RJA Thermal Resistance Junction to Ambient 94 /W
Tstg Storage Temperature Range -65to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 32 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, =0 5 V
Collector cut-off current ICBO VCB=25V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
hFE(1) VCE=1V,IC=500mA 85 375
DC current gain hFE(2) VCE=1V,IC=1A 60
hFE(3) VCE=10V,IC=5mA 50
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA 0.5 V
VBE1 VCE=10V,IC=5mA 0.68 V
Base-emitter voltage
VBE2 VCE=1V,IC=1A 1 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 40 MHz
Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 38 pF
CLASSIFICATION OF hFE(1)
Rank BCP68-10 BCP68-16 BCP68-25
Range 85-160 100-250 160-375
BCP68
SOT-223 Transistor(NPN)
Typical Characteristics
BCP68
SOT-223 Transistor(NPN)