LGE bcp68 free download

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BCP68 SOT-223 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1 W RJA Thermal Resistance Junction to Ambient 94 /W Tstg Storage Temperature Range -65to+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 32 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100A, =0 5 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A hFE(1) VCE=1V,IC=500mA 85 375 DC current gain hFE(2) VCE=1V,IC=1A 60 hFE(3) VCE=10V,IC=5mA 50 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA 0.5 V VBE1 VCE=10V,IC=5mA 0.68 V Base-emitter voltage VBE2 VCE=1V,IC=1A 1 V Transition frequency fT VCE=5V,IC=10mA,f=100MHz 40 MHz Collector output capacitance Cob VCB=5V,IE=0,f=1MHz