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KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR
LOW POWER AUDIO AMPLIFIER
TO-126
LOW CURRENT, HIGH SPEED
SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage : KSE170 VCBO -60 V
: KSE171 -80 V
: KSE172 -100 V
Collector-Emitter Voltage
: KSE170 VCEO -40 V
: KSE171 -60 V
: KSE172 -80 V
Emitter-Base Voltage VEBO -7 V
Collector Current (DC) IC -3 A 1. Emitter 2. Collector 3. Base
Collector Current (Pulse) IC -6 A
Base Current (DC) IB -1 A
)
Collector Dissiapation (T A=25 PC 1.5 W
Collector Dissipation ( T =25) PC 12.5 W
C
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc=25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage
: KSE170 VCEO(sus) IC = 10mA, IB = 0 -40 V
: KSE171 -60 V
: KSE172 -80 V
Collector Cutoff Current : KSE170 ICBO VCB = - 60V, IB = 0 -0.1 uA
: KSE171 VCB = - 80V, IE = 0 -0.1 uA
: KSE172 VCB = - 100V, IE = 0 -0.1 uA
: KSE170
VCB = - 60V, IE = 0, T C = 150 -0.1 mA
: KSE171 VCB = - 80V, I = 0, T = 150 -0.1 mA
= - 100V, I = 0, T = 150
E C
: KSE172 VCB E C -0.1 mA
Emitter Cutoff Current IEBO VBE = - 7V, IC = 0 -0.1 uA
DC Current Gain hFE VCE = - 1V, IC = - 100mA 50 250
VCE = - 1V, IC = - 500mA 30
VCE = - 1V, IC = - 1.5A 12
Collector Emitter Saturation Voltage VCE(sat) IC = - 500mA, IB = - 50mA -0.3 V
IC = - 1.5A, IB = - 150mA -0.9 V
IC = - 3A, IB = - 600mA -1.7 V
Base-Emitter Saturation Voltage VBE(sat) IC = - 1.5A, IB = - 150mA -1.5 V
IC = - 3A, IB = - 600mA -2.0 V
Base Emitter On Voltage VBE(on) VCE = - 1V, IC = - 500mA -1.2 V
Current Gain-Bandwidth Product fT VCE = - 10V, IC = - 100mA, f = 10MHz 50 MHz
Output Capacitance COB VCB = - 10V, IE = 0, f = 0.1MHz 50 pF
KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR
KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR