Samsung kse170 free download

File name kse170.pdf

KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER TO-126 LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage : KSE170 VCBO -60 V : KSE171 -80 V : KSE172 -100 V Collector-Emitter Voltage : KSE170 VCEO -40 V : KSE171 -60 V : KSE172 -80 V Emitter-Base Voltage VEBO -7 V Collector Current (DC) IC -3 A 1. Emitter 2. Collector 3. Base Collector Current (Pulse) IC -6 A Base Current (DC) IB -1 A ) Collector Dissiapation (T A=25 PC 1.5 W Collector Dissipation ( T =25) PC 12.5 W C Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc=25) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : KSE170 VCEO(sus) IC = 10mA, IB = 0 -40 V : KSE171 -60 V : KSE172 -80 V Collector Cutoff Current : KSE170 ICBO VCB = - 60V, IB = 0 -0.1 uA : KSE171 VCB = - 80V, IE = 0 -0.1 uA : KSE172 VCB = - 100V, IE = 0 -0.1 uA : KSE170 VCB = - 60V, IE = 0, T C = 150 -0.1 mA : KSE171 VCB = - 80V, I = 0, T = 150