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2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4907 600 500 10 6(Pulse12) 2 30(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ
(Ta=25°C) 2SC4907 Unit mA V V V MHz pF
16.9±0.3
8.4±0.2
µA
13.0min
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.2 IB2 (A) 0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max
2.54
3.9 B C E
I C V CE Characteristics (Typical)
6
1A
V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 (I C /I B =5)
I C V BE Temperature Characteristics (Typical)
6 (V CE =4V)
80 0m A
5 Collector Current I C (A)
600m A
5 Collector Current I C (A)
4
400m A
4
300m A
3
200mA
V B E (sat) 1
p) 55°C (Case Tem Temp) 25°C (Case Temp) (Case 125°C
ase
3
mp
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
emp se T
2
se
(Ca
(Ca 25°C
p)
V C E (sat) 0 0.02 0.05 0.1
(C 125°C
5
5°
C
0
0
1
2
3
4
0.5
1
5
0
0
0.2
0.4
125
1
Te
m
1
0.6
0.8
55°C
°C
(Cas
I B =100mA
25°C
2
e Te
Te
mp)
)
)
1.0
1.2
1.4
Collector-Emitter Voltage V C E (V)
Collector Current I C (A)
Base-Emittor Voltage V B E (V)
(V C E =4V) 50 DC C urrent G ain h FE
j - a ( ° C/W)
h FE I C Characteristics (Typical)
t o n· t s t g· t f (µ s)
7 5
t on ·t stg · t f I C Characteristics (Typical)
j-a t Characteristics
4
125°C
25°C
V C C 200V I C :I B1 :I B 2 =10:1:2 1 0.5
t s tg
Sw it ching Time
55°C
Transient Thermal Resistance
1
10
t on
0.5 0.3
tf 0.1 0.2 0.5 1 5 6
5 0.02
0.05
0.1
0.5
1
5 6
1
10 Time t(ms)
100
1000
Collector Current I C (A)
Collector Current I C (A)
Safe Operating Area (Single Pulse)
20 10 5 Collect or Cur re nt I C (A)
10 0µ
Reverse Bias Safe Operating Area
20 10 5 30
P c T a Derating
s
M aximum Power Dissipa ti on P C ( W)
W ith
Collect or Cur ren t I C (A)
20
In fin ite he at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=0.5A Duty:less than 1%
nk
0.5
Without Heatsink Natural Cooling
0.5
10
Without Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(°C)
120