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2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4907 600 500 10 6(Pulse12) 2 30(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=­0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ (Ta=25°C) 2SC4907 Unit mA V V V MHz pF 16.9±0.3 8.4±0.2 µA 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) ­5 IB1 (A) 0.2 IB2 (A) ­0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max 2.54 3.9 B C E I C ­ V CE Characteristics (Typical) 6 1A V CE (sat),V BE (sat) ­ I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 (I C /I B =5) I C ­ V BE Temperature Characteristics (Typical) 6 (V CE =4V) 80 0m A 5 Collector Current I C (A) 600m A 5 Collector Current I C (A) 4 400m A 4 300m A 3 200mA V B E (sat) 1 p) ­55°C (Case Tem Temp) 25°C (Case Temp) (Case 125°C ase 3 mp ±0.2 0.8±0.2 a b ш3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. emp se T 2 se (Ca (Ca 25°C p) V C E (sat) 0 0.02 0.05 0.1 (C 125°C ­5 5° C 0 0 1 2 3 4 0.5 1 5 0 0 0.2 0.4 125 1 Te m 1 0.6 0.8 ­55°C °C (Cas I B =100mA 25°C 2 e Te Te mp) ) ) 1.0 1.2 1.4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE j - a ( ° C/W) h FE ­ I C Characteristics (Typical) t o n· t s t g· t f (µ s) 7 5 t on ·t stg · t f ­ I C Characteristics (Typical) j-a ­ t Characteristics 4 125°C 25°C V C C 200V I C :I B1 :I B 2 =10:1:­2 1 0.5 t s tg Sw it ching Time ­55°C Transient Thermal Resistance 1 10 t on 0.5 0.3 tf 0.1 0.2 0.5 1 5 6 5 0.02 0.05 0.1 0.5 1 5 6 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 20 10 5 Collect or Cur re nt I C (A) 10 0µ Reverse Bias Safe Operating Area 20 10 5 30 P c ­ T a Derating s M aximum Power Dissipa ti on P C ( W) W ith Collect or Cur ren t I C (A) 20 In fin ite he at si 1 1 Without Heatsink Natural Cooling L=3mH IB2=­0.5A Duty:less than 1% nk 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(°C) 120