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Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm)
(96-232-C107)
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Transistors
FAbsolute maximum ratings (Ta = 25_C)
2SD2114K / 2SD2144S
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
FElectrical characteristic curves
hFE values are classified as follows :
233
Transistors
2SD2114K / 2SD2144S
234
Transistors
2SD2114K / 2SD2144S
FRon measurement circuit
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