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File information:
File name:2sd2144.pdf
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Size:122 kB
Extension:pdf
MD5:f9bd206f984da1f37c3d7711493de205
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Descr:Transistor
Group:Electronics > Components > Transistors >
Uploaded:18-02-2009
User:Resanto
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2sd2144.pdfTransistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Transistors 2SD2114K / 2SD2144S 234 Transistors 2SD2114K / 2SD2144S FRon measurement circuit 235

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