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DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES · Low VCE(sat): VCE(sat) 0.3 V · High hFE: · On-chip dumper-diode · Auto-mounting possible in radial taping specifications @IC = 3.0 A, IB = 30 mA hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Ta = 25°C PW 10 ms, duty cycle 2% Conditions Ratings 100 100 7.0 ±7.5 ±10 2.0 1.8 150 -55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15603EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4813 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Collector saturation voltage Collector saturation voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Diode order voltage Symbol ICBO IEBO hFE1* hFE2* VCE(sat)1* VCE(sat)2* VCE(sat)3* VCE(sat)4* VBE(sat)* fT Cob ton tstg tf VDF IDF = 5.0 A Conditions VCB = 100 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 3.0 A VCE = 2.0 V, IC = 5.0 A IC = 3.0 A, IB = 60 mA IC = 3.0 A, IB = 30 mA IC = 5.0 A, IB = 100 mA IC = 5.0 A, IB = 50 mA IC = 5.0 A, IB = 50 mA VCE = 5.0 V, IC = 1.0 A VCB = 10 V, IE = 0 , f = 1 MHz IC = 5.0 A, IB1 = -IB2 = 100 mA RL = 3.0 , VCC 16 V 150 110 0.5 2.0 0.5 1.4 450 150 0.1 0.15 0.2 0.3 0.4 0.55 1.2 MIN. TYP. MAX. 10 17 2,000 Unit µA mA - - V V V V V MHz pF µs µs µs V * Pulse test PW 350 µs, duty cycle 2% PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 0.7 MAX. EQUIVALENT CIRCUIT 2 Data Sheet D15603EJ2V0DS 2SC4813 TYPICAL CHARACTERISTICS (Ta = 25°C) ° Total Power Dissipation PT (W) Ambient Temperature Ta (°C) IC Derating dT (%) Ambient Temperature Ta (°C) Single pulse Transient Thermal Resistance rth(j-a)(t) (°C/W) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Pulse Width PW (s) Collector Current IC (A) Collector