SILICON POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load.
PACKAGE DRAWING (UNIT: mm)
· High hFE and low VCE(sat): hFE 800 (VCE = 2 V, IC = 3 A) VCE(sat) 0.12 V (IC = 3 A, IB = 0.03 A) · On-chip C to E damper diode · Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) °
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 100 7.0 ±7.5 ±10 2.0 30 2.0 150 -55 to +150 U|