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| File name: | datasheet12n60.pdf [preview ] |
| Size: | 537 kB |
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| MD5: | 736d4b5b1dee81f8119f95ac5dfc52ad |
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| Descr: | irfpc60 |
| Group: | Electronics > Components > Transistors > |
| Uploaded: | 20-12-2007 |
| User: | laxxus |
| Multipart: | 0 |
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| datasheet12n60.pdf | FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features · · · · · · 12A, 600V, RDS(on) = 0.7 @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA12N60 600 12 7.6 48 ±3 | |
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