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STW8NC80Z N-CHANNEL 800V - 1.3 - 6.7A TO-247 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STW8NC80Z 800 V < 1.5 6.7 A n TYPICAL RDS(on) = 1.3 n EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED DESCRIPTION TO-247 The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- INTERNAL SCHEMATIC DIAGRAM ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage