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File name: | phd12n10e_2.pdf [preview phd12n10e 2] |
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Mfg: | . Electronic Components Datasheets |
Model: | phd12n10e 2 🔎 |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips phd12n10e_2.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 24-05-2020 |
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File name phd12n10e_2.pdf Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. The device is intended for ID Drain current (DC) 14 A use in Switched Mode Power Ptot Total power dissipation 75 W Supplies (SMPS), motor control, Tj Junction temperature 175 |
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