. Electronic Components Datasheets bf1107 2 free download

File name bf1107_2.pdf

BF1107 N-channel single gate MOSFET Rev. 04 -- 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Currentless RF switch 1.3 Applications I Various RF switching applications such as: N Passive loop through for VCR tuner N Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Lins(on) on-state insertion loss VSG = VDG = 0 V; f = 50 MHz to 860 MHz RS = RL = 50 - - 2.5 dB RS = RL = 75 - - 3.5 dB ISLoff off-state isolation VSG = VDG = 5 V; f = 50 MHz to 860 MHz RS = RL = 50 30 - - dB RS = RL = 75 30 - - dB RDSon drain-source on-state VGS = 0 V; ID = 1 mA - 12 20 resistance VGS(p) gate-source pinch-off VDS = 1 V; ID = 20