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File name: | kmb8d2n60qa.pdf [preview kmb8d2n60qa] |
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Mfg: | . Electronic Components Datasheets |
Model: | kmb8d2n60qa 🔎 |
Original: | kmb8d2n60qa 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors KEC kmb8d2n60qa.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 25-05-2020 |
User: | Anonymous |
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File name kmb8d2n60qa.pdf SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Back-light Inverter. H T D P G L FEATURES VDSS=60V, ID=8.2A. Drain-Source ON Resistance. A DIM MILLIMETERS RDS(ON)=22m (Max.) @ VGS=10V A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 RDS(ON)=27m (Max.) @ VGS=4.5V B2 _ 8 5 6.02 + 0.3 Super High Dense Cell Design D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 H _ 1.63 + 0.2 MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) 1 4 L _ 0.65 + 0.2 |
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