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File name: | stw8nb90_sth8nb90fi.pdf [preview stw8nb90 sth8nb90fi] |
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Mfg: | . Electronic Components Datasheets |
Model: | stw8nb90 sth8nb90fi 🔎 |
Original: | stw8nb90 sth8nb90fi 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stw8nb90_sth8nb90fi.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 25-05-2020 |
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File name stw8nb90_sth8nb90fi.pdf STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 8A STH8NB90FI 900 V < 1.45 5A TYPICAL RDS(on) = 1.1 (s) s s EXTREMELY HIGH dv/dt CAPABILITY ct s 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 3 du ) s 2 2 s GATE CHARGE MINIMIZED 1 1 ro t(s DESCRIPTION TO-247 ISOWATT218 P Using the latest high voltage MESH OVERLAYTM te uc process, STMicroelectronics has designed an ad- le od vanced family of power MOSFETs with outstanding o performances. The new patent pending strip layout bs e Pr coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, - O let exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- (s) bso tics. ct APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING du ) - O s SWITH MODE POWER SUPPLIES (SMPS) ro s DC-AC CONVERTERS FOR WELDING t(s EQUIPMENT P ete oduc ABSOLUTE MAXIMUM RATINGS ol Symbol Parameter Value Unit bs e Pr STW8NB90 STH8NB90FI VDS Drain-source Voltage (VGS = 0) 900 V O VDGR Drain-gate Voltage (RGS = 20 k) 900 V let VGS Gate- source Voltage |
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