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File name: | bfg424f.pdf [preview bfg424f] |
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Model: | bfg424f 🔎 |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips bfg424f.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 25-05-2020 |
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File name bfg424f.pdf BFG424F NPN 25 GHz wideband transistor Rev. 01 -- 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Very high power gain s Low noise figure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.3 Applications s Radio Frequency (RF) front end wideband applications such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVison (SATV) tuners x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB) 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 4.5 V IC collector current - 25 30 mA Ptot total power dissipation Tsp 90 |
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