. Electronic Components Datasheets pbss302nd free download

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PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 -- 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features I Ultra low collector-emitter saturation voltage VCEsat I 4 A continuous collector current capability IC I Up to 15 A peak current I Very low collector-emitter saturation resistance I High efficiency due to less heat generation 1.3 Applications I Power management functions I Charging circuits I DC-to-DC conversion I MOSFET gate driving I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current [1] - - 4 A ICM peak collector current single pulse; - - 15 A tp 1 ms RCEsat collector-emitter IC = 6 A; [2] - 55 75 m saturation resistance IB = 600 mA [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Pulse test: tp 300